File Sphalerite unit cell depth fade 3D balls.png thumb The crystal structure of aluminiumgalliumarsenide is Zincblende crystal structure zincblende . Aluminiumgalliumarsenide also aluminum galliumarsenideAluminium Al sub x sub gallium Ga sub 1 x sub arsenic As is a semiconductor material with very nearly the same lattice constant as Galliumarsenide GaAs , but a larger bandgap . The x in the formula above is a number between 0 and 1 this indicates an arbitrary alloy between Galliumarsenide GaAs and Aluminiumarsenide AlAs . The bandgap varies between 1.42 electron volt eV GaAs and 2.16 eV AlAs . For x 0.4, the direct bandgap bandgap is direct . The formula AlGaAs should be considered an abbreviated form of the above, rather than any particular ratio. Aluminiumgalliumarsenide is used as a barrier material in GaAs based heterostructure devices. The AlGaAs layer confines the electrons to a galliumarsenide region. An example of such a device is a quantum well infrared photodetector QWIP . It can also be used in 1064 nm Infra red laser diode s. Safety and toxicity aspects The toxicology of AlGaAs has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminiumgalliumarsenide sources such as trimethylgallium and arsine and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review. ref Journal of Crystal Growth 2004 doi 10.1016 j.jcrysgro.2004.09.007 ref References references External links http www.ioffe.ru SVA NSM Semicond AlGaAs index.html Extensive site on the physical properties of aluminiumgalliumarsenide DEFAULTSORT AluminiumGalliumArsenide Category Arsenides Category Aluminium compounds Category Gallium compounds Category Semiconductor materials Category III V compounds Category Light emitting diode materials ar de Aluminiumgalliumarsenid es Arseniuro de galio aluminio fr Ars niure de galliumaluminium it Arseniuro ... more details
capitalized, and the company filed for bankruptcy in 1995. Complex layered structures of galliumarsenide in combination with aluminiumarsenide AlAs or the alloy Aluminiumgalliumarsenide Al sub x ... ref See also colbegin 3 AluminiumarsenideAluminiumgalliumarsenide Arsine Cadmium telluride Gallium antimonide Galliumarsenide phosphide Gallium manganese arsenideGallium phosphide Gallium nitride Heterostructure emitter bipolar transistor Indium arsenide Indium galliumarsenide Indium phosphide ...Chembox Verifiedfields changed Watchedfields changed verifiedrevid 446900102 ImageFile1 Galliumarsenide unit cell 3D balls.png ImageFile Ref chemboximage correct ?? ImageSize 244 ImageFile2 Galliumarsenide ... arsenide PIN Galliumarsenide Section1 Chembox Identifiers CASNo 1303 00 0 CASNo Ref cascite correct ... correct chemspider EINECS 215 114 8 UNNumber 1557 MeSHName galliumarsenide RTECS LW8800000 ... 53 SPhrases S1 2 , S20 21 , S28 , S45 , S60 , S61 NFPA F 1 NFPA H 3 NFPA R 2 NFPA O W Galliumarsenide ... has a 3 oxidation state . Galliumarsenide can be prepared by direct reaction from the elements ... of GalliumArsenide publisher IEEE Inspec year 1996 isbn 085296885X ref and the same strategy has been ... sup is complexed with a hydroxamic acid HA , for example ref Oxidative dissolution of galliumarsenide ... process for GaAs. File MidSTAR 1.jpg thumb upright High efficiency, triple junction galliumarsenide ... important application of GaAs is for high efficiency solar cell s. Galliumarsenide GaAs is also ......9..366H ref Single crystal s of galliumarsenide can be manufactured by the Bridgeman technique ... InGaAs and GaInNAs. Safety The toxicological properties of galliumarsenide have not been thoroughly ... arsenic. The environment, health and safety aspects of galliumarsenide sources such as trimethylgallium ... bibcode 2004JCrGr.272..816S ref California lists galliumarsenide as a carcinogen. ref Cite ... Cancer or Reproductive Toxicity galliumarsenide, hexafluoroacetone, nitrous oxide and vinyl cyclohexene ... more details
chembox Watchedfields changed verifiedrevid 401795907 Name Aluminiumarsenide ImageFile Boron phosphide unit cell 1963 CM 3D balls.png ImageSize ImageName OtherNames Section1 Chembox Identifiers ChemSpiderID Ref chemspidercite correct chemspider ChemSpiderID 81112 InChI 1 Al.As rAlAs c1 2 SMILES Al As InChIKey MDPILPRLPQYEEN LYSWLDLJAW StdInChI Ref stdinchicite correct chemspider StdInChI 1S Al.As StdInChIKey Ref stdinchicite correct chemspider StdInChIKey MDPILPRLPQYEEN UHFFFAOYSA N CASNo 22831 42 1 CASNo Ref cascite correct CAS PubChem 89859 Section2 Chembox Properties Formula AlAs MolarMass 101.9031 g mol Appearance orange crystals Density 3.72 g cm sup 3 sup Solubility MeltingPt 1740 C 2013 K BandGap 2.12 eV indirect ref name ioffe http www.ioffe.ru SVA NSM Semicond AlGaAs index.html Ioffe database ref ElectronMobility 200 cm sup 2 sup V s 300 K ThermalConductivity 0.9 W cm K 300 K RefractIndex 3 infrared Section3 Chembox Structure Coordination Tetrahedral CrystalStruct Zincblende crystal structure Zinc Blende SpaceGroup T sup 2 sup sub d sub F 4 3m Section7 Chembox Hazards EUClass NFPA H NFPA F NFPA R RPhrases SPhrases Section8 Chembox Related OtherAnions OtherCations OtherFunctn Aluminiumgalliumarsenide , Aluminium indium arsenide , Aluminium antimonide , Boron arsenide Function semiconductor materials OtherCpds Aluminiumarsenide or aluminum arsenideAluminium arsenic is a semiconductor material with almost the same lattice constant as galliumarsenide and aluminiumgalliumarsenide and wider band gap than galliumarsenide. Properties ref name berger L. I. Berger Semiconductor materials CRC Press, 1996 ISBN 0 8493 8912 7, 9780849389122 available on google books , p. 126 ref Thermal expansion coefficient 5 m C m Debye temperature 417 K Microhardness 5.0 GPa 50 g load References reflist External links Aluminium compounds Category Arsenides Category Aluminium compounds ... fr Ars niure d aluminium ja ru zh ... more details
Galliumarsenide phosphide Gallium Arsenic sub 1 x sub Phosphorus sub x sub is a semiconductor material , an alloy of galliumarsenide and gallium phosphide . It exists in various composition ratios indicated in its formula by the fraction x . Galliumarsenide phosphide is used for manufacturing red, orange and yellow light emitting diode s. It is often grown on gallium phosphide substrates to form a GaP GaAsP heterostructure . In order to tune its electronic properties, it may be doping semiconductors doped with nitrogen GaAsP N ref Characteristics of Nitrogen Doped GaAsP Light Emitting Diodes, Tadashige Sato and Megumi Imai, Jpn. J. Appl. Phys. vol. 41 pp. 5995 5998 2002 doi 10.1143 JJAP.41.5995 ref . See also GalliumarsenideGallium phosphide Indium galliumarsenide phosphide Indium gallium phosphide Aluminiumgalliumarsenide phosphide Gallium indium arsenide antimonide phosphide References references External links Category Semiconductor materials Category Gallium compounds Category Arsenides Category Phosphides Category III V compounds Category Light emitting diode materials condensedmatter stub fr Phospho ars niure de gallium pl Fosforo arsenek galu ... more details
Indium galliumarsenide InGaAs is a semiconductor composed of indium , gallium and arsenic . It is used in high power and high frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and galliumarsenide . InGaAs bandgap also makes it the detector material of choice in optical fiber communication at 1300 and 1550 nanometer nm . Gallium indium arsenide GaInAs is an alternative name for InGaAs. Indium galliumarsenide was synthesized by T.P. Pearsall in 1976, who was the first to realize that single crystal indium galliumarsenide could be grown epitaxially on InP. Pearsall is credited with the determination of the band gap, the effective masses of electrons and holes, electron and hole mobilities and other fundamental properties of indium galliumarsenide. In 1978, Pearsall demonstrated the first high performance p i n detector, and two years later the uni traveling carrier utc photodiode. Both devices are currently widely used in optical fibre telecommunications. The indium content determines the two dimensional charge carrier density. Properties Image InGaAs Energy band composition.PNG right thumb 500px Energy gap versus gallium composition for InGaAs The optical and mechanical properties of InGaAs can be varied by changing the ratio of In and Ga, In sub x sub Ga sub 1 x sub As. ref http www.sensorsinc.com GaAs.html Technology What is InGaAs? ref The InGaAs device is normally grown on an indium phosphide InP substrate. In order to match the lattice constant of InP and avoid mechanical strain, In sub 0.53 sub Ga ... and lungs. The environment, health and safety aspects of indium galliumarsenide sources such as trimethylgallium ... j.jcrysgro.2004.09.007 bibcode 2004JCrGr.272..816S ref See also indium gallium phosphide Indium gallium zinc oxide galliumarsenide indium arsenide References Reflist External links http www.ioffe.rssi.ru ..., Russia DEFAULTSORT Indium GalliumArsenide Category Indium compounds Category Gallium compounds Category ... more details
Gallium manganese arsenide is a magnetic semiconductor . It is based on the world s second favorite semiconductor , GaAs , and as such is readily compatible with existing semiconductor technologies. Differently from other Magnetic semiconductor dilute magnetic semiconductors DMSs , such as the majority of those based on II VI semiconductors , it is not Paramagnetism paramagnetic . ref name furdyna diluted 1988 Cite journal volume 64 issue 4 pages R29 R64 last Furdyna first J. K. title Diluted magnetic semiconductors journal Journal of Applied Physics year 1988 url http link.aip.org link ?JAP 64 R29 1 doi 10.1063 1.341700 bibcode 1988JAP....64...29F ref but Ferromagnetism ferromagnetic , and hence exhibits hysteretic magnetization behavior. This memory effect is of importance for the creation of persistent devices. In Ga,Mn As, the manganese atoms provide a magnetic moment, and each also acts as an Acceptor semiconductors acceptor , making it a p type material. The presence of Charge carrier carriers allows the material to be used for Spin polarization spin polarized currents. In contrast, many other Ferromagnetism ferromagnetic Magnetic semiconductor DMSs are strongly insulating ref name ohno magnetotransport 1992 Cite journal doi 10.1103 PhysRevLett.68.2664 volume 68 issue 17 pages 2664 2667 last Ohno first H. coauthors H. Munekata, T. Penney, S. von Moln r, L. L. Chang title Magnetotransport properties of p type In,Mn As diluted magnetic III V semiconductors journal Physical Review Letters date 1992 04 27 url http link.aps.org abstract PRL v68 p2664 pmid 10045456 bibcode 1992PhRvL .... E. C. Wood, Jr. Evans title Manganese incorporation behavior in molecular beam epitaxial galliumarsenide .... In Ga,Mn As the manganese substitute into gallium sites in the GaAs crystal and provide a magnetic ... atoms in the zinc blende lattice structure and the latter is where an arsenic atom occupies a gallium ... Semiconductor materials Category Ferromagnetic materials Category Gallium compounds Category Arsenides ... more details
Aluminium indium arsenide , also indium aluminiumarsenide or AlInAs Aluminium Al sub x sub indium In sub 1 x sub arsenic As , is a semiconductor material with very nearly the same lattice constant as Gallium indium arsenide GaInAs , but a larger bandgap . The x in the formula above is a number between 0 and 1 this indicates an arbitrary alloy between indium arsenide InAs and Aluminiumarsenide AlAs . The formula AlInAs should be considered an abbreviated form of the above, rather than any particular ratio. Aluminium indium arsenide is used e.g. as a buffer layer in HEMT metamorphic HEMT transistors, where it serves to adjust the lattice constant differences between the GaAs substrate and the GaInAs channel. It can be also used to form alternate layers with indium galliumarsenide , which act as quantum well s these strcuctures are used in e.g. broadband quantum cascade laser s. Safety and toxicity aspects The toxicology of AlInAs has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium indium arsenide sources such as trimethylindium and arsine and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review ref Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors D V Shenai Khatkhate, R Goyette, R L DiCarlo and G Dripps, Journal of Crystal Growth, vol. 1 4, pp. 816 821 2004 doi 10.1016 j.jcrysgro.2004.09.007 ref . References references External links DEFAULTSORT Aluminium Indium Arsenide Category Semiconductor materials Category III V compounds Category Arsenides Category Aluminium compounds Category Indium compounds ar ... more details
Aluminiumgallium indium phosphide Aluminum Gallium Indium Phosphorus , also AlInGaP , InGaAlP , etc. is a semiconductor material . AlGaInP is used in manufacture of light emitting diode s of high brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode laser s. AlGaInP layer is often grown by heteroepitaxy on galliumarsenide or gallium phosphide in order to form a quantum well structure. Safety and toxicity aspects The toxicology of AlInGaP has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium indium gallium phosphide sources such as trimethylgallium , trimethylindium and phosphine and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review ref Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors D V Shenai Khatkhate, R Goyette, R L DiCarlo and G Dripps, Journal of Crystal Growth, vol. 1 4, pp. 816 821 2004 doi 10.1016 j.jcrysgro.2004.09.007 ref . See also Indium phosphide Gallium indium phosphide Aluminiumgallium phosphide Indium galliumarsenide phosphide References reflist Notes refbegin Band structure parameters of quaternary phosphide semiconductor alloys investigated by magneto optical spectroscopy, I J Griffin, D Wolverson, J J Davies, M Emam Ismail, J Heffernan, A H Kean, S W Bland and G Duggan, Semicond. Sci. Technol. vol. 15 pp. 1030 1034 2000 doi 10.1088 0268 1242 15 11 303 High Brightness Light Emitting Diodes G. B. Stringfellow and M. George Craford, Semiconductors and Semimetals, vol. 48, pp. 97 226. refend DEFAULTSORT AluminiumGallium Indium Phosphide Category Semiconductor materials Category Aluminium compounds Category Gallium compounds Category Indium compounds Category Phosphides Category III V compounds Category Light emitting diode materials ar ... more details
Aluminiumgallium phosphide , Al,Ga P, a phosphide of aluminium and gallium , is a semiconductor material . It is an alloy of aluminium phosphide and gallium phosphide . It is used to manufacture light emitting diode s emitting green light. See also Aluminiumgallium indium phosphide External links http www.azooptics.com details.asp?ArticleID 34 Light Emitting Diode An Introduction, Structure, and Applications of LEDs Category Aluminium compounds Category Gallium compounds Category Phosphides Category Semiconductor materials Category III V compounds Condensed matter stub ar ... more details
Indium galliumaluminium nitride InGaAlN is a GaN based compound semiconductor. It is usually prepared by epitaxial growth, such as MOCVD, MBE, PLD, etc. This material is the base for blue LDs and LEDs. inorganic compound stub Category Indium compounds Category Gallium compounds Category Aluminium compounds Category Nitrides ... more details
Aluminiumgallium nitride AlGaN is a semiconductor material . It is an alloy of aluminium nitride and gallium nitride . AlGaN is used to manufacture light emitting diode s operating in blue to ultraviolet region, where wavelengths down to 250 nm far UV were achieved. It is also used in blue semiconductor laser s. It is also used in detectors of ultraviolet radiation, and in AlGaN GaN HEMT transistors. AlGaN is often used together with gallium nitride or aluminium nitride , forming heterojunction s. AlGaN layers can be also grown on sapphire . Safety and toxicity aspects The toxicology of AlGaN has not been fully investigated. The AlGaN dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminiumgallium nitride sources such as trimethylgallium and ammonia and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review ref Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors D V Shenai Khatkhate, R Goyette, R L DiCarlo and G Dripps, Journal of Crystal Growth, vol. 1 4, pp. 816 821 2004 doi 10.1016 j.jcrysgro.2004.09.007 ref . References references External links DEFAULTSORT AluminiumGallium Nitride Category Semiconductor materials Category Aluminium compounds Category Gallium compounds Category Nitrides Category III V compounds Category Light emitting diode materials ar ... more details
Gallium indium arsenide antimonide phosphide Gallium Indium Arsenic Antimony Phosphorus or GaInPAsSb is a semiconductor material . Research has shown that GaInAsSbP can be used in the manufacture of mid infrared light emitting diode s ref Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes, A. Krier, V. M. Smirnov, P. J. Batty, V. I. Vasil ev, G. S. Gagis, and V. I. Kuchinskii, Appl. Phys. Lett. vol. 90 pp. 211115 2007 doi 10.1063 1.2741147 ref ref Lattice matched GaInPAsSb InAs structures for devices of infrared optoelectronics, M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus , G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov and E. A. Kognovitskaya, Semiconductors vol. 36 num. 8 pp. 944 949 2002 doi 10.1134 1.1500478 ref and thermophotovoltaic cells ref Low Bandgap GaInAsSbP Pentanary Thermophotovoltaic Diodes, K. J. Cheetham, P. J. Carrington, N. B. Cook and A. Krier, Solar Energy Materials and Solar Cells, vol. 95 pp. 534 537 2011 doi 10.1016 j.solmat.2010.08.036 ref . GaInAsSbP layers can be grown by heteroepitaxy on indium arsenide , gallium antimonide and other materials. The exact composition can be tuned in order to make it Lattice constant lattice matched . The presence of five elements in the alloy allows extra degrees of freedom, making it possible to fix the lattice constant while varying the bandgap . See also Aluminiumgallium phosphide Aluminiumgallium indium phosphide Indium galliumarsenide phosphide Indium arsenide antimonide phosphide References references External links Category Semiconductor materials Category Gallium compounds Category Indium compounds Category Arsenic compounds Category Antimony compounds Category Phosphides Category III V compounds Condensedmatter stub ... more details
Ionbox Section1 Chembox Identifiers ChemSpiderID 10605727 ChemSpiderID Ref chemspidercite correct chemspider SMILES As 3 StdInChI 1S As q 3 StdInChI Ref stdinchicite correct chemspider StdInChIKey PVBJMPGOALGYQS UHFFFAOYSA N StdInChIKey Ref stdinchicite correct chemspider Section2 Chembox Properties Formula Chem As 3 MolarMass 74.9216 g mol sup 1 sup ExactMass 74.921596417 g mol sup 1 sup Section3 Chembox Related OtherAnions Bismuthide Arsenide is an arsenic anion with the charge &minus 3. The trianion is formed by the reduction of arsenic by three electrons. For example heating arsenic powder with excess sodium gives sodium arsenide Na sub 3 sub As . The anions have no existence in solution since they are extremely basic. These solid salts have very high lattice energy lattice energies . An arsenide compound is a compound with arsenic in oxidation state &minus 3, but the term is used loosely. The mineral sperrylite PtAs sub 2 sub is called a platinum arsenide , but the formal oxidation state for arsenic is &minus 2. because the solid is usually described as Pt sup 4 sup ,As sub 2 sub sup 4 sup . The description of gallium arsenide GaAs is more straightforward since it features isolated arsenic centers. Arsenides are toxic because of the inherent toxicity of arsenic and all of its compounds. Metal arsenides react with acids to form highly toxic arsine gas. See Category Arsenides category for a list. See also Arsenide mineral External links Category Anions Category Arsenides Inorganic compound stub ar de Arsenide es Arseniuro nl Arsenide ja pt Arsenieto uk vi Asenua zh ... more details
Survey accessdate 2008 11 20 first Deborah A. last Kramer ref Worldwide, galliumarsenide makes up 95 of the annual global gallium consumption. ref name Moskalyk Galliumarsenide is used in optoelectronics in a variety of infrared applications. Aluminiumgalliumarsenide AlGaAs is used in high powered ... use compound is galliumarsenide used in microwave circuitry and infrared applications. Gallium ... point compared to its neighbour elements aluminium and indium. The compound with arsenic , galliumarsenide is a semiconductor commonly used in light emitting diode s. High purity gallium is dissolved ... sources for gallium are as byproduct of aluminium and zinc production, while the sphalerite for zinc production is the minor source. Most gallium is extracted from the crude aluminium hydroxide solution ... arsenide GaAs and gallium nitride GaN used in electronic components represented about 98 of the gallium ... in integrated circuits mostly galliumarsenide , such as the manufacture of ultra high speed logic ... or metalorganic vapour phase epitaxy of thin film s of galliumarsenide, indium gallium phosphide or indium galliumarsenide .The Mars Exploration Rover s and several satellites use triple junction gallium ... of galliumarsenide germanium solar cells at the Martian surface year 2004 first D. last Crisp ... purdueHydrogen Dubious date February 2011 A number of other galliumaluminium alloys are also usable .... After reaction with water the resultant aluminium oxide and gallium mixture must be reformed back ... downs Cite book title Chemistry of aluminium, gallium, indium, and thallium author Anthony John Downs ... GaP , galliumarsenide GaAs , and gallium antimonide GaSb . These compounds have the same structure ... 389 399 ref GaCl chem GaCl 3 chem Ga GaCl 4 Hydrogen compounds Like aluminium , gallium also forms ...distinguish Galium About the chemical element Infobox galliumGallium IPAc en icon l i m respell GAL ee m is a chemical element that has the symbol Ga and atomic number 31. Elemental gallium does ... more details
chembox verifiedrevid 428779018 Name Boron Arsenide ImageFile Boron arsenide unit cell 1963 CM 3D balls.png ImageSize 200px ImageName BAs ImageFile B12As2 3D side view.jpg ImageSize 200px ImageName B sub 12 sub As sub 2 sub Section1 Chembox Identifiers CASNo Ref cascite correct ?? CASNo 12005 69 5 Section2 Chembox Properties Formula BAs or B sub 12 sub As sub 2 sub MolarMass 85.733 g mol Appearance Density 5.22 g cm sup 3 sup , solid Solubility Insoluble MeltingPtC 2027 BoilingPtC BandGap 1.50 eV BAs 3.47 eV B sub 12 sub As sub 2 sub Section4 Chembox Thermochemistry DeltaHf Entropy Section7 Chembox Hazards EUClass N A RPhrases SPhrases Section8 Chembox Related OtherAnions Boron nitride br Boron phosphide br Boron antimonide OtherCations Aluminiumarsenide br Galliumarsenide br Indium arsenide Boron arsenide is a chemical compound of boron and arsenic . It is a cubic sphalerite semiconductor with a lattice constant of 0.4777 nm and an indirect bandgap of roughly 1.5 eV. It can be alloyed with galliumarsenide . Boron arsenide also occurs as an icosahedral boride, B sub 12 sub As sub 2 sub . ref http spectra.phy.bris.ac.uk research semiconductor.asp ref It belongs to R 3m space group with a rhombohedral structure based on clusters of boron atoms and two atom As As chains. It s a wide bandgap semiconductor 3.47 eV with the extraordinary ability to self heal radiation damage. This form can be grown on substrates such as silicon carbide . Applications Solar cell s can be fabricated from boron arsenide. It s also an attractive choice for devices exposed to radiation which can severely degrade the electrical properties of conventional semiconductors, causing devices to cease functioning. Among the particularly intriguing possible applications for B sub 12 sub As sub 2 sub are beta cells, devices capable of producing electrical energy by coupling a radioactive beta emitter ... P. D. authorlink coauthors year 1975 month title Ordered Boron Arsenide journal Journal of the American ... more details
pp vandalism small yes About the metallic element pp move indef SPELLING OF ALUMINIUM Please see the talk page, this article is written using the IUPAC spelling of aluminium and so ium should be used. The article ... names, so sulfur , etc. should be maintained. Infobox aluminiumAluminium IPAc en icon l j u ... Al , and its atomic number is 13. It is not soluble in water under normal circumstances. Aluminium ... about 8 by weight of the Earth s solid surface. Aluminium metal is too reactive chemically to occur ... title Chemical of the Week Aluminum accessdate 2007 08 28 ref The chief ore of aluminium is bauxite . Aluminium is remarkable for the metal s low density and for its ability to resist corrosion due to the phenomenon of passivation . Structural components made from aluminium and its aluminium ... and structural materials. The most useful compounds of aluminium, at least on a weight basis, are the oxides and sulfates. Despite its prevalence in the environment, aluminium salts are not known to be used ... roles of aluminium compounds are of continuing interest. Characteristics File Aluminium bar surface etched.jpg thumb left Etched surface from a high purity 99.9998 aluminium bar, size 55 37 mm Physical Aluminium is a soft, durable, lightweight, ductility ductile and malleable metal with appearance ranging from silvery to dull gray, depending on the surface roughness. Aluminium is nonmagnetic and does not easily ignite. A fresh film of aluminium film serves as a good reflector approximately 92 of visible ... engineering yield strength of pure aluminium is 7 11 Pascal unit MPa , while aluminium alloy s have ... Aluminium has about one third the density and Elastic modulus stiffness of steel . It is easily machining ... resistance can be excellent due to a thin surface layer of aluminium oxide that forms when the metal is exposed to air, effectively preventing further oxidation . The strongest aluminium alloys ..., particularly in the presence of dissimilar metals. Aluminium atoms are arranged in a cubic crystal ... more details
Chembox Related OtherAnions Indium phosphide br Indium antimonide OtherCations Galliumarsenide OtherFunctn Function OtherCpds Indium arsenide , InAs , or indium monoarsenide , is a semiconductor material ... be formed in a monolayer of indium arsenide on indium phosphide or galliumarsenide. The mismatches ... dots can also be formed in indium galliumarsenide, as indium arsenide dots sitting in the galliumarsenide matrix. References Refimprove date May 2009 reflist External links http www.ioffe.rssi.ru ... thermal.html title Thermal properties of Indium Arsenide InAs accessdate 2011 11 22 ref Indium arsenide ... detectors can be used in higher power applications at room temperature as well. Indium arsenide is also used for making of diode laser s. Indium arsenide is similar to galliumarsenide and is a direct bandgap material. Indium arsenide is sometimes used together with indium phosphide . Alloyed with galliumarsenide it forms indium galliumarsenide a material with band gap dependent on In Ga ratio, a method principally similar to alloying indium nitride with gallium nitride to yield indium gallium nitride . InAs is well known for its high electron mobility and narrow energy bandgap. It is widely ... more details
Zinc arsenide Zn sub 3 sub As sub 2 sub is a binary compound of zinc with arsenic which forms gray tetragonal crystals. Zinc compounds Category Zinc compounds Category Arsenides inorganic compound stub simple Zinc arsenide ... more details
An arsenide mineral is a mineral that contains arsenide as its main anion . Arsenides are grouped with the sulfide mineral sulfides in both the Dana and Strunz mineral classification systems. ref http webmineral.com dana II 2.shtml 2.1 Webmineral Dana ref ref http webmineral.com strunz II.shtml Webmineral Strunz ref Examples algodonite Cu sub 6 sub As domeykite Cu sub 3 sub As l llingite FeAs sub 2 sub nickeline NiAs rammelsbergite NiAs sub 2 sub safflorite Co,Fe As sub 2 sub skutterudite Co,Ni As sub 3 sub sperrylite PtAs sub 2 sub References Reflist Category Arsenide minerals mineral stub fr Ars niure min ral ja uk ... more details
chembox ImageFile ImageSize ImageName ImageFile1 ImageSize1 ImageName1 OtherNames Cadmium diarsenide Section1 Chembox Identifiers ChemSpiderID 10678197 InChI 1 2As.3Cd q2 3 3 2 SMILES Cd 2 . Cd 2 . Cd 2 . AsH6 3 . AsH6 3 InChIKey PYIKGNIRLAMTQG UHFFFAOYAS CASNo 12006 15 4 EINECS 234 484 1 RTECS Section2 Chembox Properties Formula Cd sub 3 sub As sub 2 sub MolarMass 487.08 g mol Appearance solid, dark grey Density 3.031 Solubility decomposes in water MeltingPt BoilingPt Section3 Chembox Structure Coordination CrystalStruct Section7 Chembox Hazards EUClass FlashPt NFPA F 1 NFPA H 4 NFPA R 0 NFPA O W PEL 5 micrograms Cd m sub 3 sub LD50 no data Section8 Chembox Other OtherAnions OtherCations Cadmium arsenide cadmium Cd sub 3 sub arsenic As sub 2 sub is a crystal line semiconductor with a tetragonal structure in the II V family. It is a narrow gap semiconductor with an band gap energy gap of 0.14 Electronvolt eV . The electron mobility is very large at ambient temperature. It is a n type semiconductor n type intrinsic semiconductor . Cadmium arsenide can be prepared as amorphous semiconductive glass . Cadmium arsenide shows the Nernst effect . Cadmium arsenide is used in infrared detector s using Nernst effect, and in thin film dynamic pressure sensor s. It can be also used to make magnetoresistance magnetoresistors , and in photodetector s. http intl.ieeexplore.ieee.org xpl abs free.jsp?arNumber 781173 Cadmium arsenide can be used as a dopant for HgCdTe . External links http www.npi.gov.au database substance info profiles 17.html National Pollutant Inventory Cadmium and compounds Cadmium compounds Category Arsenides Category Cadmium compounds Category Semiconductor materials inorganic compound stub ja zh ... more details
Gallium nitride br Galliumarsenide br Gallium antimonide OtherCations Aluminium phosphide br Indium phosphide Gallium phosphide Gallium Phosphorus , a phosphide of gallium , is a compound ... materials GalliumarsenideGallium nitride Indium phosphide Alloys Aluminiumgallium indium phosphide Indium gallium phosphide Galliumarsenide phosphide External links http www.ioffe.rssi.ru SVA NSM Semicond GaP index.html Ioffe NSM data archive References Reflist Gallium compounds Category Semiconductor materials Category Optical materials Category Gallium compounds Category Phosphides Category ... standalone or together with galliumarsenide phosphide . Pure GaP LEDs emit green light at a wavelength ... 700 nm . Gallium phosphide is transparent for yellow and red light, therefore GaAsP on GaP LEDs are more efficient than GaAsP on galliumarsenide GaAs . At temperatures above 900 C, gallium phosphide ... . Gallium phosphide has applications in optical systems. Its refractive index is between 4.30 at 262 ... GaP ref Light emitting diodes Gallium phosphide is used in the manufacture of low cost ... fr Phosphure de gallium pl Fosforek galu ru fi Galliumfosfidi ... more details
chembox verifiedrevid 396140689 ImageFile Sphalerite unit cell 3D balls.png IUPACName Gallium III antimonide OtherNames Gallium antimonide Section1 Chembox Identifiers ChemSpiderID Ref chemspidercite correct chemspider ChemSpiderID 3436915 InChI 1 Ga.Sb rGaSb c1 2 InChIKey VTGARNNDLOTBET KXXLTECTAC StdInChI Ref stdinchicite correct chemspider StdInChI 1S Ga.Sb StdInChIKey Ref stdinchicite correct chemspider StdInChIKey VTGARNNDLOTBET UHFFFAOYSA N CASNo Ref cascite 1 ?? CASNo 12064 03 8 PubChem 6335277 SMILES Ga Sb Section2 Chembox Properties Formula GaSb MolarMass 191.483 g mol Appearance Density 5.614 g cm sup 3 sup MeltingPt 712 C BoilingPt Solubility insoluble BandGap 0.726 eV 300 K ElectronMobility 3000 cm sup 2 sup V s 300 K SpecRotation MagSus ThermalConductivity 0.32 W cm K 300 K RefractIndex 3.8 Section3 Chembox Structure MolShape CrystalStruct Sphalerite , Pearson symbol cF8 SpaceGroup F 43m, No. 216 Section7 Chembox Hazards MainHazards NFPA H 1 NFPA F 0 NFPA R 0 NFPA O FlashPt non flammable Autoignition Gallium antimonide GaSb is a semiconductor semiconducting compound of gallium and antimony of the III V family. It has a lattice constant of about 0.61 nanometre nm . Applications GaSb can be used for Infrared detector s, infrared LED s and semiconductor laser lasers and transistors , and thermophotovoltaic systems. See also Aluminium antimonide Indium antimonide Galliumarsenide External links http www.ioffe.rssi.ru SVA NSM Semicond GaSb properties listed at NSM , Ioffe Institute. http www.onr.navy.mil 02 matoc onr docs pa1 pa1 005.doc National Compound Semiconductor Roadmap at the Office of Naval Research Gallium compounds Category Semiconductor materials Category Gallium compounds Category Antimonides Category III V compounds material stub ar de Galliumantimonid es Antimoniuro de galio fr Antimoniure de gallium it Antimoniuro di gallio pl Antymonek galu ru ... more details
Related OtherAnions Gallium phosphide br Galliumarsenide br Gallium antimonide OtherCations Boron nitride br Aluminium nitride br Indium nitride Function OtherFunctn OtherCpds Aluminiumgalliumarsenide br Indium galliumarsenide br Galliumarsenide phosphide br Aluminiumgallium nitride br Indium gallium nitride Gallium nitride Gallium Nitrogen is a binary boron group III nitrogen group V ... hotter temperatures and work at much higher voltages than galliumarsenide GaAs transistors, they make ... s . The mixture of GaN with indium In indium gallium nitride InGaN or Aluminium Al Aluminiumgallium ...chembox Watchedfields changed verifiedrevid 450764160 Name Gallium nitride ImageFile GaNcrystal.jpg ImageFile2 Wurtzite polyhedra.png IUPACName Gallium nitride OtherNames Name Section1 Chembox Identifiers ..., Christian. Investigation of the Thermal Properties of Gallium Nitride Using the Three Omega Technique ... have shown stability in radiation environments. ref cite web title Enhancement Mode Gallium Nitride ... journal Jpn. J. Appl. Phys. volume 40 year 2001 page L195 L197 doi 10.1143 JJAP.40.L195 ref Gallium ... temperatures than silicon transistors. The first gallium nitride metal oxide semiconductor .... Gallium nitride doped with small amounts of antimony Sb has been proposed on theoretical grounds ... Mahendra K. last7 Menon first7 Madhu ref In 2010 the first enhancement mode gallium nitride transistors ... title Single crystal gallium nitride nanotubes volume 422 pmid 12686996 last2 He first2 R last3 ... radars. ref http www.spacewar.com reports Gallium Nitride Based Modules Set New 180 Day Standard For High Power Operation 999.html Gallium Nitride Based Modules Set New 180 Day Standard For High Power ... biocompatable Research Finds Gallium Nitride is Non Toxic, Biocompatible Holds Promise For Biomedical ... is an irritant to skin, eyes and lungs. The environment, health and safety aspects of gallium nitride ... materials the worlds best gallium nitride World s Best Gallium Nitride, IEEE Spectrum, July 2010 ... more details
, GaCl sub 3 sub is milder than aluminium trichloride . Gallium III is easier to reduce than Al III , so the chemistry of reduced gallium compounds is more extensive than for aluminium. Ga sub 2 sub Cl ... atoms with the gallium atoms essentially tetrahedrally coordinated by chlorine is surprising, as the chlorides of the two members of group 13 above and below gallium, aluminium trichloride AlCl sub ... structure. As a consequence of its structure where there are no significant lattice forces, gallium trichloride has the lowest melting point of all of the aluminium, gallium and indium trihalides ...chembox verifiedrevid 443154935 ImageFile Gallium trichloride from xtal 2004 3D balls.png ImageSize IUPACName OtherNames Gallium III chloride, Trichlorogallium, Trichlorogallane Section1 Chembox Identifiers ... Related OtherAnions Gallium III fluoride br Gallium III bromide br Gallium III iodide OtherCations Aluminium chloride br Indium III chloride br Thallium III chloride Gallium trichloride is the chemical compound with the formula GaCl sub 3 sub . Solid gallium trichloride exists as a dimer with the formula ... for a metal halide. It is the main precursor to most derivatives of gallium and a reagent in organic synthesis . ref Yamaguchi, M. Shibasaki, M. Gallium Trichloride in Encyclopedia of Reagents ... of Ga III and Fe III are similar, and gallium III compounds have been used as diamagnetic analogues of ferric compounds. Preparation Gallium trichloride can be prepared from the elements, heating gallium metal in a stream of chlorine , and purifying the product by sublimation under vacuum. ref S.C. Wallwork I.J.Worral J.Chem. Soc 1965,1816 ref ref Kovar, R. A. Gallium Trichloride Inorganic ... It can also be prepared from the gallium oxide by heating with thionyl chloride ref H.Hecht, G.Jander ... 4 sub . In the gas phase the dimers dissociate to trigonal planar monomers. Complexes Gallium is the lightest member of Group 13 to have a full d shell, gallium has the electronic configuration Argon ... more details
Gallium chloride may refer to Gallium trichloride gallium III chloride digallium hexachloride , GaCl sub 3 sub Gallium dichloride gallium II chloride digallium tetrachloride , GaCl sub 2 sub disambig ... more details
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